Title :
Optimized active region design for high speed 850 nm VCSELs
Author :
Gustavsson, J.S. ; Healy, S.B. ; Westbergh, P. ; Haglund, Å ; Larsson, A. ; O´Reilly, E.P.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
In this work, we explore the use of strained InGaAs/AlGaAs QWs and benchmark the performance against conventional GaAs/AlGaAs QWs.VCSELs with an optimized InGaAs/AlGaAs QW active region have a modulation bandwidth of 20 GHz at 25degC and 15 GHz at 85degC and have enabled error-free transmission over 50 (100) m multimode fiber up to 32 (25) Gb/s at a bias current density as low as 11 kA/cm2 under direct current modulation.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; high-speed optical techniques; indium compounds; optical fibre communication; optical transmitters; quantum well lasers; surface emitting lasers; InGaAs-AlGaAs; bias current density; direct current modulation; error-free transmission; high-speed VCSEL; laser active region design; modulation bandwidth; multimode fiber; strained quantum well; temperature 25 C; temperature 85 C; wavelength 850 nm; Bandwidth; Charge carrier density; Design optimization; Electrons; Gallium arsenide; Indium gallium arsenide; Photonics; Resonance; Solid modeling; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5192928
