Nd-doped polymer waveguide amplifiers at 850–930 nm

Author

Yang, Jing ; Diemeer, Mart B J ; Sengo, Gabriël ; Pollnau, Markus ; Driessen, Alfred

Author_Institution

Dept. of Integrated Opt. Micro Syst., Univ. of Twente, Enschede, Netherlands

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

Nd-complex-doped, polymer channel waveguides were realized on thermally oxidized silicon wafers by a simple fabrication procedure. Broadband optical gain was demonstrated at 850-930 nm. Internal net gain up to 5.3 dB/cm was obtained at 850 nm, which is very promising for optical amplification in optical backplanes. With this result a route toward low-cost integrated waveguide amplifiers for optical interconnects has been opened.

Keywords

integrated optics; laser beams; neodymium; optical backplanes; optical fabrication; optical polymers; solid lasers; waveguide lasers; JkJk:Nd; Si; broadband optical gain; fabrication procedure; integrated waveguide amplifiers; internal net gain; neodymium-doped polymer waveguide amplifiers; optical amplification; optical backplanes; optical interconnects; polymer channel waveguides; thermally oxidized silicon wafers; wavelength 850 nm to 930 nm; Backplanes; Broadband amplifiers; Optical amplifiers; Optical device fabrication; Optical interconnections; Optical polymers; Optical waveguides; Semiconductor optical amplifiers; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192933

Filename

5192933