Monolithic 77- and 94-GHz InP-based HBT MMIC VCOs

Author

Wang, H. ; Tran, L. ; Cowles, J. ; Lin, E. ; Huang, P. ; Block, T. ; Streit, D. ; Oki, A.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

fYear

1997

fDate

10-10 June 1997

Firstpage

91

Lastpage

94

Abstract

This paper presents the development of 77- and 94-GHz monolithic fundamental mode VCOs using InP-based HBT MMIC technology. The InP-based HBT performance was improved by base mesa undercutting the base ohmic along two sides to reduce the base-collector junction capacitor by 40% which results in f/sub T/ and f/sub max/ of 70 and 170 GHz, respectively. By using this improved HBT device, the 77-GHz VCO exhibits a measured oscillation frequency of 77.6 GHz with a peak output power of -3 dBm, while the 94-GHz VCO demonstrates a measured oscillation frequency of 94.7 GHz with a peak output power of -3.5 dBm. The 94-GHz VCO is the highest frequency fundamental mode oscillator ever reported using bipolar device technology.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MIMIC; circuit tuning; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; voltage-controlled oscillators; 70 to 94.7 GHz; 77 GHz; 94 GHz; EHF; InP; InP-based HBT MMIC VCO; MIMIC; MM-wave IC; base mesa undercutting; base-collector junction capacitor; bipolar device technology; monolithic fundamental mode VCOs; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Phase noise; Power generation; Power measurement; Radio frequency; Space technology; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598749

Filename

598749