DocumentCode
280190
Title
Two-dimensional arrays of InGaAs/InP MQW modulators
Author
Rejman-Greene, M.A.Z. ; Scott, E.G.
Author_Institution
British Telecom Res. Lab., Ipswich, UK
fYear
1990
fDate
33037
Firstpage
42430
Lastpage
42432
Abstract
Novel MQW modulator arrays operating in the 1.3-1.5 μm wavelength range are described: (i) arrays of devices with symmetrical coupled wells operating without the need for an offset bias; and (ii) a demonstration of the use of Double-sided Epitaxy in improving modulation to 3.8 dB for a -10 V change in bias
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; semiconductor epitaxial layers; semiconductor quantum wells; 1.3 to 1.5 micron; III-V semiconductors; InGaAs-InP modulators; MQW modulator arrays; double sided epitaxy; quantum confined Stark effect; symmetrical coupled wells; two dimensional arrays;
fLanguage
English
Publisher
iet
Conference_Titel
Applications of Quantum Wells in Optoelectronics, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
190381
Link To Document