The temperature sensitivity of asymmetric Fabry-Perot modulators [using GaAs-AlGaAs MQW]

Author

Zouganeli, P. ; Whitehead, M. ; Stevens, P.J. ; Rivers, A. ; Parry, G. ; Roberts, J.S. ; Button, C.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK

fYear

1990

fDate

33037

Firstpage

42552

Lastpage

42554

Abstract

The authors have investigated the temperature sensitivity of AFPMs over a temperature range of 21 degrees, and have shown that the contrast of the device remains over 10 dB for a fixed bias, while that figure can be further improved by voltage tracking and/or wavelength tracking. The results are very encouraging since they indicate that the structure is sufficiently temperature insensitive to be suitable for a practical system. The efficient design of the structure, using a low finesse cavity, ensures a considerable enhancement of the electroabsorptive effects, maintaining at the same time tolerance to fabrication and environmental factors

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; 25 to 45 C; GaAs-AlGaAs modulators; III-V semiconductors; MQW modulators; asymmetric Fabry-Perot modulators; contrast; efficient design; electroabsorptive effects; temperature sensitivity; voltage tracking; wavelength tracking;

fLanguage

English

Publisher

iet

Conference_Titel

Applications of Quantum Wells in Optoelectronics, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190385