Optical waveguides formed in InGaAs/InP multi quantum wells by phosphorous implantation

Author

Whitehead, N.J. ; Gillin, W.P. ; Bradley, I.V. ; Weiss, B.L. ; Claxton, P.

Author_Institution

Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK

fYear

1990

fDate

33037

Firstpage

42675

Lastpage

42678

Abstract

Phosphorous implantation and subsequent annealing has been used to selectively disorder In_0.53Ga_0.47As/InP MQW material. Photoluminescence measurements have shown that band gap modification occurs during annealing and that this process is probably due to implantation disorder rather than diffusion of the phosphorous atom. These results also suggest that when the disorder level exceeds the amorphous threshold the mixing process is inhibited. The selective disordering method has been used to form stripe optical waveguides with propagation losses which increase with disorder level. The lowest propagation loss measured was 4.4 dB/cm

Keywords

III-V semiconductors; annealing; gallium arsenide; indium compounds; ion beam mixing; ion implantation; luminescence of inorganic solids; optical losses; optical waveguides; photoluminescence; semiconductor doping; semiconductor quantum wells; III-V semiconductors; INGaAs-InP quantum wells; InGaAs-InP:P; P implantation; annealing; band gap modification; implantation disorder; photoluminescence; propagation losses; selective disordering method; stripe optical waveguides;

fLanguage

English

Publisher

iet

Conference_Titel

Applications of Quantum Wells in Optoelectronics, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190389