Title :
Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides
Author :
White, I.H. ; Tsang, H.K. ; Penty, R.V. ; Garrett, B.
Author_Institution :
Dept. of Cambridge Univ., UK
Abstract :
The authors report a very strongly polarisation dependent nonlinearity of 1.06 μm, and, using a model of a nonlinear Fabry-Perot waveguide cavity, an effective value of the nonlinear refractive index has been deduced to be -3×10-15 and -4×10-6 m2/W for TM and TE polarised light respectively. Various nonlinear processes have been considered for the nonlinear refraction. A measurement of the two photon absorption coefficient in the cavity using input optical power levels of less than a watt peak is described
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; nonlinear optics; optical waveguides; refractive index; semiconductor junction lasers; semiconductor quantum wells; two-photon processes; 1.06 micron; GaAs-AlGaAs quantum wells; III-V semiconductors; active quantum well waveguides; model; nonlinear Fabry-Perot waveguide cavity; nonlinear refractive index; polarisation dependent nonlinearity; two photon absorption coefficient;
Conference_Titel :
Applications of Quantum Wells in Optoelectronics, IEE Colloquium on
Conference_Location :
London
