RF performance of strained SiGe pMOSFETs: linearity and gain

In this work, we investigate RF performance of strained-SiGe pMOSFET because of its easy integration into planar architecture than strained-Si nMOSFET. RF figure of merits considered include linearity, intrinsic gain and g/sub m//I/sub d/. To optimize RF performance, variations of SOI thickness (t/sub si/) and Ge concentration in the channel are investigated. Furthermore, since graded channel (GC) MOSFET has been proposed as a candidate of RF application by B. Cheng et al., 1998, a graded strained-SiGe channel pMOSFET is studied comparatively for RF analysis.