Title :
Study of N-induced traps due to nitrided metal gate in HK/MG nMOSFETs
Author :
Cassé, M. ; Garros, X. ; Weber, O. ; Andrieu, F. ; Reimbold, G. ; Boulanger, F.
Author_Institution :
CEA-LETI, Minatec, Grenoble, France
Abstract :
We report an experimental study of the defects induced by the TiN metal gate. N-induced defects are evidenced and energy profile through the Si band gap is measured by original spectroscopic charge pumping measurements. The density of defects is then correlated to the electron mobility degradation and compared to a theoretical model.
Keywords :
MOSFET; electron mobility; energy gap; high-k dielectric thin films; N-induced defects; N-induced traps; band gap; density of defects; electron mobility degradation; energy profile; nMOSFET; nitrided metal gate; spectroscopic charge pumping measurements; Charge pumps; Electron mobility; Logic gates; Silicon; Temperature measurement; Tin;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618228
