Title :
Strain-dependent hole masses and piezoresistive properties of silicon
Author_Institution :
Naruto Univ. of Educ., Japan
Abstract :
In this paper, new model which includes strain-dependent hole massed in weakly stressed silicon is presented, which is the case at room temperature. The band mixing (BM) mass change effect due to the mixing between the light hole and the spin-orbit split-off bands, and the degeneracy lifting (DL) mass change effect caused by the decrease of the interaction between the heavy- and light-hole bands are taken into account.
Keywords :
elemental semiconductors; hole mobility; molecular weight; piezoresistance; piezoresistive devices; silicon; Si; band mixing mass change; degeneracy lifting mass change; light hole; piezoresistive properties; spin-orbit split-off bands; strain-dependent hole masses; Charge carrier mobility; Piezoresistance; Piezoresistive devices; Silicon;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407382
