DocumentCode
2802051
Title
Strain-dependent hole masses and piezoresistive properties of silicon
Author
Matsuda, K.
Author_Institution
Naruto Univ. of Educ., Japan
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
173
Lastpage
174
Abstract
In this paper, new model which includes strain-dependent hole massed in weakly stressed silicon is presented, which is the case at room temperature. The band mixing (BM) mass change effect due to the mixing between the light hole and the spin-orbit split-off bands, and the degeneracy lifting (DL) mass change effect caused by the decrease of the interaction between the heavy- and light-hole bands are taken into account.
Keywords
elemental semiconductors; hole mobility; molecular weight; piezoresistance; piezoresistive devices; silicon; Si; band mixing mass change; degeneracy lifting mass change; light hole; piezoresistive properties; spin-orbit split-off bands; strain-dependent hole masses; Charge carrier mobility; Piezoresistance; Piezoresistive devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location
West Lafayette, IN, USA
Print_ISBN
0-7803-8649-3
Type
conf
DOI
10.1109/IWCE.2004.1407382
Filename
1407382
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