Title :
Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction
Author :
Beneventi, G. Betti ; Perniola, L. ; Fantini, A. ; Blachier, D. ; Toffoli, A. ; Gourvest, E. ; Maitrejean, S. ; Sousa, V. ; Jahan, C. ; Nodin, J.F. ; Persico, A. ; Loubriat, S. ; Roule, A. ; Lhostis, S. ; Feldis, H. ; Reimbold, G. ; Billon, T. ; De Salvo,
Author_Institution :
CEA-LETI, MINATEC, Grenoble, France
Abstract :
In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties as well. In particular, GeTe PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% of RESET current reduction with respect to pure GeTe and GST. Furthermore, our GeTeC10% memory cells are expected to guarantee a 10-years-lifetime-temperature of about 127°C, which is one of the highest ever reported for PCM. The outstanding properties of GeTeC make this material promising for non-volatile memory technologies.
Keywords :
carbon; germanium compounds; phase change memories; GeTe:C; PCM device; RESET current reduction; carbon-doped GeTe phase-change memory; chalcogenide material; data retention property; memory cell; phase-change nonvolatile memory; Carbon; Metals; Phase change materials; Programming; Resistance; Temperature measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618230
