Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

Author

Beneventi, G. Betti ; Perniola, L. ; Fantini, A. ; Blachier, D. ; Toffoli, A. ; Gourvest, E. ; Maitrejean, S. ; Sousa, V. ; Jahan, C. ; Nodin, J.F. ; Persico, A. ; Loubriat, S. ; Roule, A. ; Lhostis, S. ; Feldis, H. ; Reimbold, G. ; Billon, T. ; De Salvo,

Author_Institution

CEA-LETI, MINATEC, Grenoble, France

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

313

Lastpage

316

Abstract

In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties as well. In particular, GeTe PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% of RESET current reduction with respect to pure GeTe and GST. Furthermore, our GeTeC10% memory cells are expected to guarantee a 10-years-lifetime-temperature of about 127°C, which is one of the highest ever reported for PCM. The outstanding properties of GeTeC make this material promising for non-volatile memory technologies.

Keywords

carbon; germanium compounds; phase change memories; GeTe:C; PCM device; RESET current reduction; carbon-doped GeTe phase-change memory; chalcogenide material; data retention property; memory cell; phase-change nonvolatile memory; Carbon; Metals; Phase change materials; Programming; Resistance; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618230

Filename

5618230