Title :
High frequency interconnects on silicon substrates
Author :
Ponchak, G.E. ; Downey, A.N. ; Katehi, L.P.B.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The measured propagation constant of coplanar waveguide (CPW) on silicon wafers as a function of the line dimensions and the resistivity of the Si wafer; CPW on GaAs wafers as a function of the line dimensions; and thin film microstrip (TFMS) fabricated with polyimide on the surface of a silicon wafer is presented. It is shown that the attenuation of CPW on 2500 /spl Omega/-cm Si wafers and of TFMS with a polyimide thickness of 4 /spl mu/m or greater is comparable to the attenuation of similar lines on GaAs.
Keywords :
MMIC; coplanar waveguides; electrical conductivity; integrated circuit interconnections; microstrip lines; polymer films; silicon; 2500 ohmcm; 4 micron; CPW; GaAs; GaAs wafers; Si; Si substrates; Si wafer; coplanar waveguide; high frequency interconnects; line dimensions; polyimide; propagation constant; resistivity; thin film microstrip; Attenuation; Conductivity; Coplanar waveguides; Frequency; Gallium arsenide; Polyimides; Propagation constant; Semiconductor thin films; Silicon; Substrates;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598751
