DocumentCode
2802252
Title
An improved Monte Carlo algorithm for ionized impurity scattering in bands with warping, non-parabolicity and degeneracy
Author
Gomez-Campos, F.M. ; Rodriguez-Bolivar, S. ; Carceller, J.E.
Author_Institution
Departamento de Electronica y Tecnologia de Computadores, Univ. de Granada, Spain
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
188
Lastpage
189
Abstract
Hole scattering with ionized impurities in semiconductors is investigated within the framework of effective mass theory and the Brooks-Herrings formalism. The present work proposes an efficient technique for calculating the final state after a scattering, valid even when the anisotropy, non-parabolicity and degeneracy of the valence band are taken into consideration.
Keywords
Monte Carlo methods; hole mobility; impurities; scattering; Brooks-Herrings formalism; Monte Carlo algorithm; hole scattering; ionized impurities; ionized impurity scattering; mass theory; Charge carrier mobility; Impurities; Monte Carlo methods; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location
West Lafayette, IN, USA
Print_ISBN
0-7803-8649-3
Type
conf
DOI
10.1109/IWCE.2004.1407390
Filename
1407390
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