DocumentCode :
2802252
Title :
An improved Monte Carlo algorithm for ionized impurity scattering in bands with warping, non-parabolicity and degeneracy
Author :
Gomez-Campos, F.M. ; Rodriguez-Bolivar, S. ; Carceller, J.E.
Author_Institution :
Departamento de Electronica y Tecnologia de Computadores, Univ. de Granada, Spain
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
188
Lastpage :
189
Abstract :
Hole scattering with ionized impurities in semiconductors is investigated within the framework of effective mass theory and the Brooks-Herrings formalism. The present work proposes an efficient technique for calculating the final state after a scattering, valid even when the anisotropy, non-parabolicity and degeneracy of the valence band are taken into consideration.
Keywords :
Monte Carlo methods; hole mobility; impurities; scattering; Brooks-Herrings formalism; Monte Carlo algorithm; hole scattering; ionized impurities; ionized impurity scattering; mass theory; Charge carrier mobility; Impurities; Monte Carlo methods; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
Type :
conf
DOI :
10.1109/IWCE.2004.1407390
Filename :
1407390
Link To Document :
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