Title :
Monte-Carlo simulation of carbon nanotube devices
Author :
Hasan, S. ; Jing Guo ; Vaidyanathan, M. ; Alam, M.A. ; Lundstrom, M.
Author_Institution :
Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A Monte-Carlo (MC) simulator to model transport in carbon nanotubes (CNTs) has been developed. It can self-consistently simulate both metallic and semiconducting CNTs, assuming a coaxially gated geometry.
Keywords :
Monte Carlo methods; carbon nanotubes; electron mobility; electron transport theory; semiconductor device models; Monte-Carlo simulation; carbon nanotube devices; coaxially gated geometry; Charge carrier mobility; Monte Carlo methods; Semiconductor device modeling;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407391
