Title :
Comparison of elementary bipolar transistor degradations: Dose rate and combined experimental parameters effects
Author :
Bonora, L. ; David, J.P. ; Calvet, M.-C. ; Ecoffet, R. ; Barillot, C. ; Calvel, P.
Author_Institution :
ONERA-CERT, Toulouse, France
Abstract :
In this paper, are investigated the influences of experimental parameters such as dose rate, irradiation temperature and base-emitter bias upon the degradation of elementary NPN and lateral PNP transistors. Very low dose rate results (3 mrad(Si)/s) are included and compared with several sets of experimental conditions for high dose rate irradiations. A specific configuration, combining an elevated temperature and a moderate reverse bias applied to the emitter-base junction, was found to be reasonably consistent with the room-temperature, low dose-rate response
Keywords :
bipolar transistors; gamma-ray effects; NPN transistor; base-emitter bias; bipolar junction transistor; dose rate; irradiation temperature; lateral PNP transistor; radiation induced degradation; Bipolar transistors; Degradation; Electric variables measurement; Failure analysis; Ionizing radiation; Performance evaluation; Telecommunications; Temperature sensors; Testing; Vehicles;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698895
