DocumentCode
2802317
Title
The effective conduction-band edge method of quantum correction to the Monte Carlo device simulation
Author
Bo Wu ; Ting-Wei Tang
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
196
Lastpage
197
Abstract
A self-consistent Monte Carlo (MC) simulation is used to simulate the ultra-thin double gate MOSFET. To include quantum effects, a quantum correction is made to the semi-classical MC simulation by the effective conduction-band edge (ECBE) method according to Tang and Wu (2003).
Keywords
MOSFET; Monte Carlo methods; conduction bands; logic gates; Monte Carlo device simulation; conduction-band edge method; quantum correction; ultra-thin double gate MOSFET; MOSFETs; Monte Carlo methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location
West Lafayette, IN, USA
Print_ISBN
0-7803-8649-3
Type
conf
DOI
10.1109/IWCE.2004.1407394
Filename
1407394
Link To Document