Title :
The effective conduction-band edge method of quantum correction to the Monte Carlo device simulation
Author :
Bo Wu ; Ting-Wei Tang
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Abstract :
A self-consistent Monte Carlo (MC) simulation is used to simulate the ultra-thin double gate MOSFET. To include quantum effects, a quantum correction is made to the semi-classical MC simulation by the effective conduction-band edge (ECBE) method according to Tang and Wu (2003).
Keywords :
MOSFET; Monte Carlo methods; conduction bands; logic gates; Monte Carlo device simulation; conduction-band edge method; quantum correction; ultra-thin double gate MOSFET; MOSFETs; Monte Carlo methods;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407394
