Simulation schemes in 2D nanoscale MOSFET´s: WKB based method

We present; a numerical method to simulate quantum transport in silicon ultrashort channel MOSFET (DGFET). The considered model is ballistic rind consists in solving Schrodinger equations with quantum transmitting boundary conditions, coupled to the Poisson equation for the electrostatic potential. There is an enormous amount of work dedicated to numerical solution of Schrodinger-Poisson systems (with open boundary conditions) either by finite element/difference methods or Green´s function techniques. Our work, which is based on finite element approximation, reduces the number of grid points in order to lower the computational cost, while keeping a good accuracy.