Quantum potential approach to modeling nano-MOSFETs

In this work we propose a novel parameter-free effective potential scheme for use in conjunction with particle-based simulations. The method is based on perturbation theory around thermodynamic equilibrium and leads to a quantum potential which depends on the energy and wavevector of each individual electron. The quantum potential is derived from the idea that the Wigner equation and the Boltzmann equation with the quantum corrected potential should possess the same steady states. This approach, with both the barrier and the Hartree potential corrections, has been applied to modeling transport in a nano-scale MOSFET with gate length of 25 nm.