Title :
A comparative efficiency study of silicon-based solid state transformers
Author :
Qin, Hengsi ; Kimball, Jonathan W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Missouri Univ. of Sci. & Technol., Rolla, MO, USA
Abstract :
Solid state transformers (SSTs) have lower physical profiles than traditional 60 Hz transformers and provide active control of power flow. However, they are not as efficient as traditional 60 Hz transformers because of the presence of power electronic converters. This work presents an analytical loss calculation model of an SST. It evaluates conduction loss, switching loss and transformer loss in four candidate SST topologies. Loss breakdown under both rated-load and light-load conditions are compared for all four configurations.
Keywords :
elemental semiconductors; load flow control; power electronics; power transformers; silicon; Si; active control; conduction loss; power electronic converters; power flow; silicon; solid state transformers; switching loss; transformer loss; Converters; Insulated gate bipolar transistors; Switches; Switching loss; Transistors; Zero voltage switching; Efficiency; Soft Switching; Solid State Transformer;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-5286-6
Electronic_ISBN :
978-1-4244-5287-3
DOI :
10.1109/ECCE.2010.5618255
