Title :
MOCVD growth of indium phosphide and its related materials
Author_Institution :
Epitaxial Products Int., Cardiff, UK
Abstract :
InP and the related lattice matched compounds, InGaAs, InGaAsP, InAlAs and InGaAlAs are now becoming the materials of choice for a wide range of optical, optoelectronic and electronic devices and circuits. In applications such as optical fibre communications systems InP and its related materials have become a multi-million pound industry. One of the most appropriate technologies capable of enhancing the performance and satisfying the large scale manufacturing criteria for these materials is Metal Organic Vapour Phase Epitaxy (MOVPE)
Keywords :
III-V semiconductors; chemical vapour deposition; indium compounds; semiconductor growth; vapour phase epitaxial growth; InAlAs; InGaAlAs; InGaAs; InGaAsP; InP; MOCVD growth; MOVPE; Metal Organic Vapour Phase Epitaxy; large scale manufacturing; lattice matched compounds; optical fibre communications systems; related materials; semiconductors;
Conference_Titel :
InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on
Conference_Location :
London
