Title :
Electrical characteristics of low dimensional InGaAs-InP structures
Author :
Guy, D.R.P. ; Higgs, A.W. ; Hutchinson, H.J. ; Lee, D. ; Apsley, N. ; Kane, M.J. ; Anderson, D.A. ; Taylor, L.L. ; Bass, S.J.
Author_Institution :
R. Signals & Radar Establ., Malvern, UK
Abstract :
Discusses low dimensional InGaAs-InP structures, both heterojunctions and quantum wells, which have modified electronic properties by virtue of their reduced dimensionality. The increase in carrier density and enhancement of mobility arising from the effect of low temperature persistent photoconductivity are described in studies of modulation-doped heterojunctions and quantum wells. Defect conduction is investigated in studies of effective barrier height and differential conductance in a single barrier structure and the electronic properties of quantum wells close to doped contact regions are investigated by admittance spectroscopy
Keywords :
III-V semiconductors; carrier density; carrier mobility; gallium arsenide; indium compounds; photoconductivity; semiconductor junctions; semiconductor quantum wells; admittance spectroscopy; carrier density increase; defect conduction; differential conductance; doped contact regions; effective barrier height; electrical characteristics; enhancement of mobility; low dimensional InGaAs-InP structures; low temperature persistent photoconductivity; modified electronic properties; modulation-doped heterojunctions; quantum wells; reduced dimensionality; semiconductors; single barrier structure;
Conference_Titel :
InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on
Conference_Location :
London
