Electrical characteristics of low dimensional InGaAs-InP structures

Author

Guy, D.R.P. ; Higgs, A.W. ; Hutchinson, H.J. ; Lee, D. ; Apsley, N. ; Kane, M.J. ; Anderson, D.A. ; Taylor, L.L. ; Bass, S.J.

Author_Institution

R. Signals & Radar Establ., Malvern, UK

fYear

1990

fDate

33045

Firstpage

42430

Lastpage

42435

Abstract

Discusses low dimensional InGaAs-InP structures, both heterojunctions and quantum wells, which have modified electronic properties by virtue of their reduced dimensionality. The increase in carrier density and enhancement of mobility arising from the effect of low temperature persistent photoconductivity are described in studies of modulation-doped heterojunctions and quantum wells. Defect conduction is investigated in studies of effective barrier height and differential conductance in a single barrier structure and the electronic properties of quantum wells close to doped contact regions are investigated by admittance spectroscopy

Keywords

III-V semiconductors; carrier density; carrier mobility; gallium arsenide; indium compounds; photoconductivity; semiconductor junctions; semiconductor quantum wells; admittance spectroscopy; carrier density increase; defect conduction; differential conductance; doped contact regions; effective barrier height; electrical characteristics; enhancement of mobility; low dimensional InGaAs-InP structures; low temperature persistent photoconductivity; modified electronic properties; modulation-doped heterojunctions; quantum wells; reduced dimensionality; semiconductors; single barrier structure;

fLanguage

English

Publisher

iet

Conference_Titel

InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190459