InP JFETs and HIGFETs for OEICs by MBE

Author

Merrett, R.P. ; Newson, D.J. ; Mansfield, C. ; Lee, M. ; Scott, E.G.

Author_Institution

British Telecom Res. Labs., Ipswich, UK

fYear

1990

fDate

33045

Firstpage

42583

Lastpage

42586

Abstract

Considerable progress has been made developing high f_t transistors on InP substrates and variants of these devices are being used for the first generation of InP based optoelectronic ICs for 1.3 and 1.5 μm systems. Here the requirement is for predictability, manufacturability and compatibility with optical components rather than just for high speed. At BTRL there has been a programme to optimise InP electronics for both optical receivers and transmitters. Epitaxial layers for this work were produced using gas source MBE at a growth temperature of 500°C. Two devices have been considered, namely the junction FET (JFET) and the heterojunction insulated gate FET (HIGFET). The results for these devices are summarised before considering the programme from their monolithic integration with PIN diodes and lasers

Keywords

III-V semiconductors; field effect integrated circuits; indium compounds; insulated gate field effect transistors; integrated circuit technology; integrated optoelectronics; junction gate field effect transistors; molecular beam epitaxial growth; receivers; 1.3 micron; 1.5 micron; 500 C; HIGFETs; InP; InP based optoelectronic ICs; InP substrates; JFETs; MBE; OEICs; PIN diodes; compatibility; gas source MBE; growth temperature; heterojunction insulated gate FET; high f_t transistors; junction FET; lasers; manufacturability; monolithic integration; optical receivers; optical transmitters; predictability; semiconductors;

fLanguage

English

Publisher

iet

Conference_Titel

InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190464