Title :
Submicron gate AlInAs/GaInAs HEMT by MOCVD and MBE
Author :
Riglet, P. ; Daste, P. ; Vingrief, J.J. ; Morel, C. ; Rochette, J.F. ; Castagne, J.
Author_Institution :
Lab. d´´Electron Philips, Limeil-Brevannes, France
Abstract :
Reports on the achievement of high performance submicron gate Al 0.48In0.52As/Ga0.47In0.53As HEMT´s both on atmospheric pressure MOCVD and on MBE grown heterostructures. Very high density and high mobility modulation doped heterostructures have been successfully grown by AP-MOCVD. FET´s, having gate lengths of 0.6 μm show transconductances as high as 680 mS/mm on MOCVD grown layers. A current gain cut-off frequency as high as 56 GHz and a maximum stable gain (MSG) value of about 12 dB at 26 GHz were extracted from the RF measurements on MBE grown layers
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor technology; solid-state microwave devices; 0.6 micron; 12 dB; 26 GHz; 56 GHz; AP-MOCVD; Al0.48In0.52As-Ga0.47In0.53As; EHF transistors; MBE; MBE grown layers; MM-wave transistors; MOCVD; MSG; RF measurements; atmospheric pressure MOCVD; current gain cut-off frequency; gate lengths; heterostructures; high mobility modulation doped heterostructures; maximum stable gain; nanometer lithography; semiconductors; submicron gate HEMT; transconductances;
Conference_Titel :
InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on
Conference_Location :
London
