Monolithic optical receiver using InP/InGaAs heterojunction FETs

Author

Spear, D.A.H. ; Dawe, P.J.G. ; Lee, W.S. ; Agnew, M.J. ; Bland, S.W.

Author_Institution

STC Technol. Ltd., Harlow, UK

fYear

1990

fDate

33045

Firstpage

42675

Lastpage

42677

Abstract

Over the past few years, considerable progress has been made worldwide towards narrowing the performance gap between the new monolithic receiver designs for use in long wavelength communication systems and the conventional PIN-FET hybrid optoelectronic receivers which are used in current systems. Progress has been assisted by the adoption, where possible, of fabrication procedures closely related to the more mature GaAs IC technology, such as full-wafer processing, planar structures, multilevel metallisation for interconnect, and elimination of multiple epitaxial growth steps. This paper presents one such technology, based around InP/InGaAs heterojunction FETs (HJFETs) and grown-junction InGaAs pin diodes, which has been used to make both simple high-impedance front ends and more advanced transimpedance receiver designs, capable of driving 50Ω loads. Recent improvements in receiver performance are also presented

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; p-i-n diodes; photodiodes; receivers; vapour phase epitaxial growth; 50 ohm; HJFETs; InP-InGaAs; PIN-FET OEIC; driving 50 Omega loads; fabrication procedures; full-wafer processing; grown-junction InGaAs pin diodes; high-impedance front ends; long wavelength communication systems; monolithic optical receiver; monolithic receiver designs; multilevel metallisation; optoelectronic receivers; planar structures; semiconductors; transimpedance receiver designs;

fLanguage

English

Publisher

iet

Conference_Titel

InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190467