Title :
GaAs-on-InP MESFETs for OEICs
Author :
O´Sullivan, P.J. ; Allan, D.A. ; Gilbert, M. ; Leigh, P.A. ; Wilkie, J.H.
Author_Institution :
British Telecom Res. Lab., Ipswich, UK
Abstract :
Long wavelength opto-electronic integrated circuits (OEICs) are expected to be important components for future telecommunication systems e.g. as receivers in local loop optical fibre systems. The combination of lattice matched optical devices and mismatched GaAs on InP electronics is an attractive approach to realise OEICs. Lattice matched optical devices are preferred from reliability considerations and GaAs MESFET electronics is a well established technology. This paper reports the growth and fabrication technologies developed to produce integrable GaAs MESFETs on InP and the performance of these devices. Concern that lattice mismatched electronics may present a reliability hazard is addressed for the first time and results of temperature overstressing are presented. Application of this MESFET technology to a simple PIN-FET receiver is demonstrated
Keywords :
III-V semiconductors; Schottky gate field effect transistors; chemical vapour deposition; environmental testing; gallium arsenide; indium compounds; integrated optoelectronics; life testing; optical communication equipment; receivers; semiconductor epitaxial layers; semiconductor technology; vapour phase epitaxial growth; GaAs MESFET electronics; GaAs-InP; InP substrate; MESFETs; OEICs; PIN-FET receiver; fabrication technologies; integrable GaAs MESFETs; lattice matched optical devices; lattice mismatched electronics; life testing; local loop optical fibre systems; mismatched GaAs on InP electronics; optical receivers; opto-electronic integrated circuits; reliability considerations; reliability hazard; semiconductors; telecommunication systems; temperature overstressing;
Conference_Titel :
InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on
Conference_Location :
London
