DocumentCode
280257
Title
IEE Colloquium on `InP Based Materials, Devices and Integrated Circuits´ (Digest No.111)
fYear
1990
fDate
33045
Abstract
The following topics were dealt with: InP materials; OEICs; solar cells; monolithic optical receivers; MOCVD; GaAs on InP substrates; HBTs; MISFETs; MESFETs; JFETs; HIGFETs; and HEMTs
Keywords
III-V semiconductors; chemical vapour deposition; field effect transistors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; solar cells; GaAs on InP substrates; GaAs-InP; HBTs; HEMTs; HIGFETs; InP; InP materials; JFETs; MESFETs; MISFETs; MOCVD; OEICs; monolithic optical receivers; semiconductors; solar cells;
fLanguage
English
Publisher
iet
Conference_Titel
InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
190469
Link To Document