DocumentCode
280259
Title
A large signal equivalent circuit model for an ion implanted MESFET
Author
Brookbanks, D.M.
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
fYear
1990
fDate
33049
Firstpage
42370
Lastpage
42375
Abstract
The author has shown how a nonlinear device model for a MESFET can be generated for use in nonlinear circuit simulators. A limited model has been used within a commercial simulator with some degree of success. In order to achieve good performance from these simulators it will be necessary to pay attention to the details of the DC and AC models near to pinch off and near to the knee of the I/V characteristic at forward bias, when the gate diode becomes a controlling element. Although the author is principally interested in the behaviour of a standard GaAs MMIC MESFET some comments pertaining to the modelling of a medium power device are also made
Keywords
III-V semiconductors; MMIC; Schottky gate field effect transistors; circuit analysis computing; equivalent circuits; gallium arsenide; ion implantation; semiconductor device models; solid-state microwave devices; AC models; DC model; GaAs; ion implanted MESFET; large signal equivalent circuit model; medium power device; microwave transistors; nonlinear circuit simulators; nonlinear device model; standard MMIC MESFET;
fLanguage
English
Publisher
iet
Conference_Titel
Non-Linear Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
190473
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