SiGe SIMMWICs

Author

Luy, J.-F. ; Russer, P.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

fYear

1997

fDate

10-10 June 1997

Firstpage

105

Lastpage

108

Abstract

Millimeterwave transit time devices are monolithically integrated on a high resistivity silicon substrate. The resonant structure acts as an active antenna at 76.5 GHz with a synchronisation network. Acting as a subharmonic synchronisation oscillator, a coplanar SiGe MMIC for 25.5 GHz power generation is described. The realized module shows a frequency tuning range of >250 MHz which can be adjusted by the frequency of the synchronisation oscillator.

Keywords

Ge-Si alloys; IMPATT oscillators; MIMIC; MMIC oscillators; active antennas; circuit tuning; millimetre wave antennas; millimetre wave oscillators; modules; semiconductor materials; synchronisation; 25.5 GHz; 76.5 GHz; HBT oscillator; SHF power generation; Si; SiGe; active antenna; coplanar SiGe MMIC; frequency tuning range; high resistivity Si substrate; millimeter-wave transit time devices; module; monolithic integration; resonant structure; subharmonic synchronisation oscillator; synchronisation network; Frequency synchronization; Impedance; Injection-locked oscillators; MIMICs; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Monolithic integrated circuits; Schottky diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598753

Filename

598753