2802603

Extending a 0.35 NA h-Line Stepper to 0.8 Micrometer (1.6 Micrometer Pitch) CMOS Technology Using Halo LDD Devices and Trilayer Templates

Markus, K.W. ; Goodwin-Johansson, S. ; Rogers, W.B. ; Donaldson, W.C.

MCNC Center for Microelectronics, NC

1992

1-3 Mar 1992

67

71

CMOS process; CMOS technology; Circuits; Etching; Implants; Lithography; MOS devices; Microelectronics; Resists; Titanium;

English

ieee

System Theory, 1992. Proceedings. SSST/CSA 92. The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design

0094-2898

0-8186-2665-8

conf

10.1109/SSST.1992.712194

712194