Title :
Design techniques for GaAs MMIC mixers
Author :
Norman, G.L. ; Harvey, A.R.
Author_Institution :
Plessey Research Caswell Ltd., Towcester, UK
Abstract :
Linear single function GaAs MMICs are now a well established technology. The demand for increased packing density and multifunction operation requires the establishment of, among other aspects, reliable mixer design techniques. The authors report on the development of nonlinear device models and their application to the design of a selection of MMIC mixers and associated linear components. Test results for these circuits are also given. In all cases the standard Plessey F20 MMIC process was used to realise the circuits
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; equivalent circuits; field effect integrated circuits; gallium arsenide; mixers (circuits); semiconductor device models; semiconductor diodes; GaAs; MESFET; MMIC mixers; Plessey F20 MMIC process; mixer design techniques; nonlinear device models;
Conference_Titel :
Non-Linear Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location :
London
