DocumentCode
2803559
Title
New Fault Detection Algorithm for Multi-level Cell Flash Memroies
Author
Jaewon Cha ; Ilwoong Kim ; Sungho Kang
Author_Institution
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear
2011
fDate
20-23 Nov. 2011
Firstpage
341
Lastpage
346
Abstract
With a development of high-capacity flash memory, a variety of applications have been featured in the current market. Since the density per unit area of multi-level cell flash memory (MLC), is doubled compared with single level cell flash memory (SLC), the MLC is widely used in flash memory. However, it is difficult to efficiently test the MLC. In order to test the MLC with low test time and low test cost, a new test algorithm for the MLC is proposed. The performance of the proposed algorithm is better than existing algorithms.
Keywords
fault diagnosis; flash memories; MLC; SLC; density per unit area; fault detection algorithm; multilevel cell flash memory; Algorithm design and analysis; Arrays; Flash memory; Maintenance engineering; Programming; Testing; Tunneling; Erase-PV3 checkerboard pattern; Multi-level Cell; NAND flash memory; NOR flash memory; defect based fault model; disturb fault model; flash memory; verify-level-shift program;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ATS), 2011 20th Asian
Conference_Location
New Delhi
ISSN
1081-7735
Print_ISBN
978-1-4577-1984-4
Type
conf
DOI
10.1109/ATS.2011.13
Filename
6114753
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