• DocumentCode
    2803559
  • Title

    New Fault Detection Algorithm for Multi-level Cell Flash Memroies

  • Author

    Jaewon Cha ; Ilwoong Kim ; Sungho Kang

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
  • fYear
    2011
  • fDate
    20-23 Nov. 2011
  • Firstpage
    341
  • Lastpage
    346
  • Abstract
    With a development of high-capacity flash memory, a variety of applications have been featured in the current market. Since the density per unit area of multi-level cell flash memory (MLC), is doubled compared with single level cell flash memory (SLC), the MLC is widely used in flash memory. However, it is difficult to efficiently test the MLC. In order to test the MLC with low test time and low test cost, a new test algorithm for the MLC is proposed. The performance of the proposed algorithm is better than existing algorithms.
  • Keywords
    fault diagnosis; flash memories; MLC; SLC; density per unit area; fault detection algorithm; multilevel cell flash memory; Algorithm design and analysis; Arrays; Flash memory; Maintenance engineering; Programming; Testing; Tunneling; Erase-PV3 checkerboard pattern; Multi-level Cell; NAND flash memory; NOR flash memory; defect based fault model; disturb fault model; flash memory; verify-level-shift program;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium (ATS), 2011 20th Asian
  • Conference_Location
    New Delhi
  • ISSN
    1081-7735
  • Print_ISBN
    978-1-4577-1984-4
  • Type

    conf

  • DOI
    10.1109/ATS.2011.13
  • Filename
    6114753