Title : 
New Fault Detection Algorithm for Multi-level Cell Flash Memroies
         
        
            Author : 
Jaewon Cha ; Ilwoong Kim ; Sungho Kang
         
        
            Author_Institution : 
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
         
        
        
        
        
        
            Abstract : 
With a development of high-capacity flash memory, a variety of applications have been featured in the current market. Since the density per unit area of multi-level cell flash memory (MLC), is doubled compared with single level cell flash memory (SLC), the MLC is widely used in flash memory. However, it is difficult to efficiently test the MLC. In order to test the MLC with low test time and low test cost, a new test algorithm for the MLC is proposed. The performance of the proposed algorithm is better than existing algorithms.
         
        
            Keywords : 
fault diagnosis; flash memories; MLC; SLC; density per unit area; fault detection algorithm; multilevel cell flash memory; Algorithm design and analysis; Arrays; Flash memory; Maintenance engineering; Programming; Testing; Tunneling; Erase-PV3 checkerboard pattern; Multi-level Cell; NAND flash memory; NOR flash memory; defect based fault model; disturb fault model; flash memory; verify-level-shift program;
         
        
        
        
            Conference_Titel : 
Test Symposium (ATS), 2011 20th Asian
         
        
            Conference_Location : 
New Delhi
         
        
        
            Print_ISBN : 
978-1-4577-1984-4
         
        
        
            DOI : 
10.1109/ATS.2011.13