Title :
The measured and predicted noise figure of a GaAs heterojunction bipolar transistor mixer
Author :
Xavier, B.A. ; Aitchison, C.S.
Abstract :
An analytical technique is developed to predict the noise performance of the GaAs Heterojunction Bipolar transistor (HBT) mixer. The measured versus modelled data shows good agreement. The measured noise figure of the HBT mixer is 15.7 dB with an associated conversion gain of +13 dB (RF=950 MHz IF=50 MHz).
Keywords :
III-V semiconductors; UHF mixers; bipolar transistor circuits; circuit noise; gallium arsenide; heterojunction bipolar transistors; 13 dB; 15.7 dB; 50 MHz; 950 MHz; GaAs; III-V semiconductors; UHF mixers; conversion gain; heterojunction bipolar transistor mixer; noise figure; noise performance; 1f noise; Circuit noise; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Mixers; Noise figure; Noise measurement; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598760
