DocumentCode :
2803946
Title :
Failure Analysis and Test Solutions for Low-Power SRAMs
Author :
Zordan, L.B. ; Bosio, A. ; Dilillo, L. ; Girard, P. ; Pravossoudovitch, S. ; Todri, A. ; Virazel, A. ; Badereddine, N.
Author_Institution :
LIRMM, Univ. Montpellier II, Montpellier, France
fYear :
2011
fDate :
20-23 Nov. 2011
Firstpage :
459
Lastpage :
460
Abstract :
Low-power SRAMs embed power gating facilities for reducing power consumption. Power gating is applied using power switches for controlling the supply voltage applied to the memory cells i.e. one or more memory blocks can be disconnected from the power supply during a long time of inactivity, thus reducing the power consumption. In this paper, we provide a detailed analysis on the impact that defective power switches impose on the behavior of SRAM core-cells. Furthermore, we propose efficient test solutions to detect such faulty behaviors.
Keywords :
SRAM chips; failure analysis; integrated circuit testing; defective power switches; failure analysis; low-power SRAM core-cells; memory blocks; power consumption reduction; power gating facilities; power supply; supply voltage; test solutions; Arrays; Circuit faults; Logic gates; MOSFETs; Power demand; Random access memory; SRAM; failure analysis; low-power design; memory test; power switch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium (ATS), 2011 20th Asian
Conference_Location :
New Delhi
ISSN :
1081-7735
Print_ISBN :
978-1-4577-1984-4
Type :
conf
DOI :
10.1109/ATS.2011.97
Filename :
6114773
Link To Document :
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