DocumentCode :
2804441
Title :
On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Author :
Kampen, C. ; Burenkov, A. ; Lorenz, J.
Author_Institution :
Fraunhofer Inst. for Integrated Syst. & Device Technol. IISB, Erlangen, Germany
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
289
Lastpage :
292
Abstract :
The influence of temperature variations during flash annealing on contact resistances in 6-T SRAM cells was studied. TCAD simulations of 32 nm single gate FD SOI devices were carried out. The active regions of a 6-T SRAM cell were simulated by 3D process simulations to calculate the Schottky contact resistances. A coupled spike and flash annealing scheme was used to anneal the devices. Flash annealing temperature fluctuations were modeled in TCAD simulations and the resulting contact resistance values were calculated. SPICE parameters of the FD SOI devices were extracted and used in circuit simulations. The dependence of contact resistances on temperature fluctuations were taken into account in the SPICE simulation by analytical models.
Keywords :
SRAM chips; annealing; contact resistance; 3D process simulation; 6-T SRAM cell; SPICE simulation; Schottky contact resistance; TCAD simulation; circuit simulation; flash annealing temperature fluctuation; flash peak temperature variation; Annealing; Ash; MOSFETs; Random access memory; Simulated annealing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
ISSN :
1930-8876
Print_ISBN :
978-1-4244-6658-0
Type :
conf
DOI :
10.1109/ESSDERC.2010.5618359
Filename :
5618359
Link To Document :
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