DocumentCode
2804690
Title
Lateral mode behavior of CW proton-implanted vertical-cavity surface-emitting lasers
Author
Hadley, G.R. ; Lear, K.L. ; Warren, M.E. ; Scott, J.W. ; Corzine, S.W.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1994
fDate
19-23 Sep 1994
Firstpage
147
Lastpage
148
Abstract
We employ a highly-sophisticated numerical model to provide the first study of lateral mode competition during CW operation of proton-implanted VCSELs. The model is validated by direct comparison with experimental data, and is used to explore new device designs for extending fundamental mode operation to higher powers
Keywords
ion implantation; laser cavity resonators; laser modes; semiconductor lasers; surface emitting lasers; CW operation; device design; fundamental mode operation; lateral mode behavior; lateral mode competition; numerical model; proton-implanted vertical-cavity surface-emitting lasers; Electric resistance; Geometrical optics; Heat sinks; Indium gallium arsenide; Laser modes; Numerical models; Radiative recombination; Semiconductor device modeling; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519308
Filename
519308
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