DocumentCode :
2804690
Title :
Lateral mode behavior of CW proton-implanted vertical-cavity surface-emitting lasers
Author :
Hadley, G.R. ; Lear, K.L. ; Warren, M.E. ; Scott, J.W. ; Corzine, S.W.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
1994
fDate :
19-23 Sep 1994
Firstpage :
147
Lastpage :
148
Abstract :
We employ a highly-sophisticated numerical model to provide the first study of lateral mode competition during CW operation of proton-implanted VCSELs. The model is validated by direct comparison with experimental data, and is used to explore new device designs for extending fundamental mode operation to higher powers
Keywords :
ion implantation; laser cavity resonators; laser modes; semiconductor lasers; surface emitting lasers; CW operation; device design; fundamental mode operation; lateral mode behavior; lateral mode competition; numerical model; proton-implanted vertical-cavity surface-emitting lasers; Electric resistance; Geometrical optics; Heat sinks; Indium gallium arsenide; Laser modes; Numerical models; Radiative recombination; Semiconductor device modeling; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
Type :
conf
DOI :
10.1109/ISLC.1994.519308
Filename :
519308
Link To Document :
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