Title :
Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond
Author :
Sampedro, Carlos ; Gámiz, Francisco ; Godoy, Andres ; Valín, Raul ; García-Loureiro, Antonio ; Rodríguez, Noel
Author_Institution :
Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain
Abstract :
With the 32 nm node in mass production, simulations tools have to include quantum effects to correctly describe the behavior of the devices. The Multi-Subband Monte Carlo (MSB-MC) approach constitutes today´s most accurate method for the study of nanodevices with important applications to SOI devices. This work presents an MSB-MC study of 32 nm node and beyond bulk-nMOSFETs which still are the mainstream in the semiconductor industry.
Keywords :
MOSFET; Monte Carlo methods; mass production; nanoelectronics; silicon-on-insulator; MSB-MC approach; SOI devices; bulk n-MOSFET; mass production; multisubband Monte Carlo simulation approach; nanodevices; quantum effects; semiconductor industry; size 32 nm; Computational modeling; Equations; Logic gates; MOSFETs; Mathematical model; Monte Carlo methods; Scattering;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618376
