DocumentCode
2804922
Title
A new model for the backscatter coefficient in nanoscale MOSFETs
Author
van der Steen, J.-L.P.J. ; Palestri, P. ; Esseni, D. ; Hueting, R.J.E.
Author_Institution
MESA+, Univ. of Twente, Enschede, Netherlands
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
234
Lastpage
237
Abstract
In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte-Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.
Keywords
MOSFET; backscatter; carrier mean free path; semiconductor device models; carrier mean free path; channel lengths; electric fields; inelastic scattering; nanoscale MOSFET; Acoustics; Backscatter; MOSFETs; Optical scattering; Phonons; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location
Sevilla
ISSN
1930-8876
Print_ISBN
978-1-4244-6658-0
Type
conf
DOI
10.1109/ESSDERC.2010.5618380
Filename
5618380
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