A novel integrated microwave bias network for low cost multistage amplifiers

A novel MMIC bias network topology utilizing FETs has been developed. The bias network is very compact, providing low DC path loss with high, broad band RF isolation. This bias network consists of two FETs and a capacitor, and is implemented with pseudomorphic HEMT. The bias network is useful in multi-stage amplifiers where stage-to-stage RF isolation is critical to system stability and performance. A VGA (variable gain amplifier) is shown with measured results as a application example of the bias network. There is no other known published information or patents on this bias network topology.