Title :
Film bulk acoustic wave filters using lead titanate on silicon substrate
Author :
Misu, Koichiro ; Nagatsuka, Tsutomu ; Wadaka, Shusou ; Maeda, Chisako ; Yamada, Akira
Author_Institution :
Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
A film bulk acoustic wave resonator and filter at GHz frequencies is reported. The resonator and filter employ lead titanate (PbTiO3 ) as the piezoelectric thin film. The films are formed by RF magnetron sputter deposition on silicon (Si) substrates. Platinum (Pt) is used as top and bottom electrodes. The thickness of the piezoelectric film is about 1 μm, and that of the electrodes is 0.1 μm. The chip size of the resonator and filter is 0.69×0.55 (mm). The resonant frequency of the fabricated resonator is 1.4 GHz. The top electrode size of the resonator is 50×50 (μm), and the quality factor Q is about 70. The insertion loss of the fabricated filter is 13.6 dB at the frequency of 1.5 GHz, and the 3 dB bandwidth is 47 MHz
Keywords :
Q-factor; UHF filters; bulk acoustic wave devices; crystal filters; crystal resonators; elemental semiconductors; lead compounds; losses; piezoelectric materials; piezoelectric thin films; platinum; silicon; sputter deposition; 0.1 mum; 0.55 mm; 0.69 mm; 1 mum; 1.4 GHz; 1.5 GHz; 13.6 dB; 47 MHz; 50 mum; GHz frequencies; PbTiO3; Pt; RF magnetron sputter deposition; Si; chip size; film bulk acoustic wave filters; film bulk acoustic wave resonator; insertion loss; lead titanate; piezoelectric thin film; platinum electrodes; quality factor; resonant frequency; silicon substrate; top electrode size; Acoustic waves; Electrodes; Film bulk acoustic resonators; Frequency; Magnetic separation; Piezoelectric films; Resonator filters; Semiconductor films; Silicon; Titanium compounds;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.765021
