مرکز منطقه ای اطلاع رساني علوم و فناوري - Growth direction dependence of polarization properties in surface-emitting lasers with strained quantum wells

DocumentCode :

2805090

Title :

Growth direction dependence of polarization properties in surface-emitting lasers with strained quantum wells

Author :

Ohtoshi, T. ; Kuroda, T. ; Niwa, A. ; Tsuji, S. ; Uomi, K.

Author_Institution :

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear :

1994

fDate :

19-23 Sep 1994

Firstpage :

151

Lastpage :

152

Abstract :

Polarization properties of surface-emitting lasers are analyzed theoretically for various crystallographic directions. In strained quantum wells on (NN1) substrates (N⩾2), the polarization can be controlled, facilitating high optical gains

Keywords :

III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; light polarisation; quantum well lasers; surface emitting lasers; In_0.7Ga_0.3As-InP; crystallographic directions; growth direction dependence; optical gains; polarization properties; strained quantum wells; surface-emitting lasers; Anisotropic magnetoresistance; Crystallography; Geometrical optics; Laboratories; Optical control; Optical polarization; Optical surface waves; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location :

Maui, HI

Print_ISBN :

0-7803-1754-8

Type :

conf

DOI :

10.1109/ISLC.1994.519310

Filename :

519310

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2805090