Title :
High-voltage analog front-end circuit for a magnetically-coupled RFID transponder
Author :
Rueangsri, Nakarin ; Thanachayanont, Apinunt
Author_Institution :
King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok
Abstract :
An analog front-end circuit for a 125-kHz RFID transponder has been designed by using a 0.35-mum high- voltage CMOS process. Due to the use of high voltage MOS transistors in all constituent circuits, RF-to-DC power conversion has been achieved at the maximum coupling coefficient without RF limiter circuits, thus saving significant chip area. Furthermore, large load modulation depth is also permitted to achieve longer reading distance, when compared to a conventional low voltage RFID circuit, simulation results are given to verify the circuit.
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit design; radiofrequency identification; transponders; CMOS process; MOS transistors; RF-to-DC power conversion; frequency 125 kHz; high-voltage analog front-end circuit; load modulation depth; magnetically-coupled RFID transponder; radiofrequency identification; size 0.35 mum; CMOS process; Circuit simulation; Coupling circuits; Low voltage; MOSFETs; Magnetic circuits; Power conversion; Radio frequency; Radiofrequency identification; Transponders; ASK modulation; Adaptive load modulation; RFID; high-voltage transponder; reader sensitivity;
Conference_Titel :
Communications, 2007. APCC 2007. Asia-Pacific Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-1374-4
Electronic_ISBN :
978-1-4244-1374-4
DOI :
10.1109/APCC.2007.4433444
