Tunable integrated active filters at microwave frequencies using gallium arsenide MMIC technology

Author

Haigh, D.O. ; Toumazou, C. ; Khanifar, A.

Author_Institution

Univ. Coll., London, UK

fYear

1990

fDate

33196

Firstpage

42491

Lastpage

42496

Abstract

A clear need for miniaturised integrated tunable filters in the microwave frequency band has been established. Transconductor-C networks with transconductors realised using GaAs depletion mode MESFETs and Si-N capacitors both realised in foundry GaAs technology appear to be viable. Some ideas and concepts relevant to the development have been discussed including linearisation techniques for GaAs transconductors, a tuning procedure for integrator Q-factor and unity-gain frequency and the need for a linear voltage controlled resistance circuit to implement Q-tuning. Simulation verifies that a fully tuned symmetrical transconductor appears suitable for precision filtering at 1 GHz

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; active filters; gallium arsenide; microwave filters; tuning; 1 GHz; GaAs; III-V semiconductors; Si₃N₄; active filters; depletion mode MESFETs; foundry technology; integrator Q-factor; linear voltage controlled resistance circuit; linearisation techniques; microwave frequency band; miniaturised integrated tunable filters; precision filtering; symmetrical transconductor; transconductors; tuning procedure; unity-gain frequency;

fLanguage

English

Publisher

iet

Conference_Titel

Microwave Filters and Multiplexers, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190860