Title :
The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off
Author :
Bragard, Michael ; Conrad, Marcus ; De Doncker, Rik W.
Author_Institution :
RWTH Aachen Univ., Aachen, Germany
Abstract :
This paper focuses on a new realization method of an Emitter Turn-off Thyristor (ETO). The unity gain turn-off capability of the Gate Commutated Thyristor (GCT) requires extremely low parasitic components within the gate path. The concept of the ETO postulates a MOSFET in the cathode current path of the thyristor, which causes several problems. A new approach leading to a significant smaller and less complex driver design is presented. The drawbacks of the known Emitter Turn-Off Thyristor (ETO) are eliminated by the integration of the MOSFETs into the press pack.
Keywords :
MOS-controlled thyristors; commutation; driver circuits; power MOSFET; thyristor applications; ETO; IETO; MOS assisted turn-off; MOSFET; driver design; gate commutated thyristor; integrated emitter turn-off thyristor; parasitic component; thyristor based high power semiconductor device; Capacitors; Cathodes; Driver circuits; Inductance; Logic gates; Presses; Thyristors; Direct FET; ETO; GCT; ICT; IETO; MOS turn-off; press pack; thyristor; unity gain;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-5286-6
Electronic_ISBN :
978-1-4244-5287-3
DOI :
10.1109/ECCE.2010.5618410
