DocumentCode
2805473
Title
Novel technique for fabricating nonabsorbing mirror laser
Author
Lim, Gabgyu ; Lee, Jaeho ; Park, Gueorugi ; Kim, Taeil
Author_Institution
New Mater. & Device Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
fYear
1994
fDate
19-23 Sep 1994
Firstpage
155
Lastpage
156
Abstract
A nonabsorbing mirror for the AlGaAs/GaAs laser was achieved by the novel and simple method of laser treatment of the cleaved facets. No surface recombination effect at the facet was observed. The catastrophic optical damage (COD) level was tripled
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser mirrors; optical fabrication; semiconductor lasers; AlGaAs-GaAs; AlGaAs/GaAs laser; catastrophic optical damage; cleaved facets; laser treatment; nonabsorbing mirror laser; surface recombination effect; Annealing; Bars; Laser modes; Mirrors; Optical pulses; Optical surface waves; Power lasers; Semiconductor lasers; Surface treatment; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519312
Filename
519312
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