Title :
Novel technique for fabricating nonabsorbing mirror laser
Author :
Lim, Gabgyu ; Lee, Jaeho ; Park, Gueorugi ; Kim, Taeil
Author_Institution :
New Mater. & Device Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
Abstract :
A nonabsorbing mirror for the AlGaAs/GaAs laser was achieved by the novel and simple method of laser treatment of the cleaved facets. No surface recombination effect at the facet was observed. The catastrophic optical damage (COD) level was tripled
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mirrors; optical fabrication; semiconductor lasers; AlGaAs-GaAs; AlGaAs/GaAs laser; catastrophic optical damage; cleaved facets; laser treatment; nonabsorbing mirror laser; surface recombination effect; Annealing; Bars; Laser modes; Mirrors; Optical pulses; Optical surface waves; Power lasers; Semiconductor lasers; Surface treatment; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519312
