• DocumentCode
    2805597
  • Title

    COLK cell : A new embedded DRAM architecture for advanced CMOS nodes

  • Author

    Crémer, S. ; Goducheau, O. ; Petiton, H. ; Gaillard, S. ; Yesilada, E. ; Vernet, M. ; Jenny, C. ; Lalanne, F.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    158
  • Lastpage
    161
  • Abstract
    This paper deals with a new and low cost embedded DRAM (eDRAM) architecture. COLK (Capacitor Over Low K) cell with capacitor placed in the first and thick SiO2 dielectric has been successfully integrated. 4Mb eDRAM testchip using this new architecture is functional in 45 nm node and presents good yield. Moreover we succeed to demonstrate the capability to continue downscaling of eDRAM for nodes down to 32 nm and 22nm.
  • Keywords
    CMOS memory circuits; DRAM chips; capacitors; low-k dielectric thin films; silicon compounds; CMOS nodes; COLK cell; SiO2; capacitor over low k cell; eDRAM testchip; low cost embedded DRAM architecture; memory size 4 MByte; size 22 nm; size 32 nm; size 45 nm; Capacitance; Capacitors; Computer architecture; Metals; Microprocessors; Random access memory; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
  • Conference_Location
    Sevilla
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-6658-0
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2010.5618417
  • Filename
    5618417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2805597