Title :
Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 μm laser diodes
Author :
Razeghi, M. ; Diaz, J. ; Eliashevich, I. ; He, X. ; Yi, H. ; Erdtman, M. ; Kolev, E. ; Wang, L. ; Garbuzov, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
The InGaAsP high power laser emitting at 808 nm with ηd =1.1 W/A, Jth=200 A/cm2, and To=155°C have been grown by LP-MOCVD. Far field divergence of 27°, output power of 3 W in the pulse-regime, 1.5 W in the quasi-CW-regime and 1 W in the CW-mode per uncoated facet have been obtained for 1 mm long diodes
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; semiconductor lasers; vapour phase epitaxial growth; 0.8 mum; 1 W; 1 mm; 1.5 W; 3 W; 808 nm; CW-mode; InGaAsP; InGaAsP-GaAs; InGaAsP/GaAs lasers; LP-MOCVD; far field divergence; high-power laser diodes; operation characteristics; output power; pulse-regime; quasi-CW-regime; uncoated facet; Current measurement; Diode lasers; Electrical resistance measurement; Gallium arsenide; Optical pulses; Power generation; Power lasers; Temperature; Thermal resistance; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519314
