DocumentCode
2805995
Title
Single event functional interrupt (SEFI) sensitivity in microcircuits
Author
Koga, R. ; Penzin, S.H. ; Crawford, K.B. ; Crain, W.R.
Author_Institution
Aerosp. Corp., Los Angeles, CA, USA
fYear
1997
fDate
15-19 Sep 1997
Firstpage
311
Lastpage
318
Abstract
The single event functional interrupt (SEFI) sensitivity of several types of microcircuits is measured with heavy ions. While simple microcircuits have not been affected by SEFI, many complex microcircuits are vulnerable to it in varying degrees. Although there are many causes for SEFIs, ion irradiation testing in conjunction with an understanding of device architecture helps refine techniques which can be used to lessen the ill effects caused by SEFI
Keywords
integrated circuit testing; ion beam effects; SEFI; device architecture; heavy ion irradiation; microcircuit; single event functional interrupt sensitivity; CMOS process; Computer errors; Digital signal processing; EPROM; Laboratories; Microprocessors; Random access memory; Single event transient; Single event upset; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698915
Filename
698915
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