Title :
Electronically tunable, 1 W CW, diffraction-limited monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA)
Author :
Osinski, J.S. ; Dzurko, K.M. ; Major, J.S., Jr. ; Parke, R.A. ; Welch, D.F.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
Summary form only given. Free-carrier tuning of an InGaAs-AlGaAs master oscillator/power semiconductor laser amplifier is demonstrated, operating at 1 W CW. Approximately 20 mA of current tunes the device ~6 Å while maintaining near-diffraction-limited performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser tuning; light diffraction; semiconductor lasers; 1 W; 20 mA; CW diffraction-limited monolithic flared amplifier-master oscillator power amplifier; InGaAs-AlGaAs; electronically tunable; free-carrier tuning; near-diffraction-limited performance; semiconductor laser amplifier; Diffraction; Distributed Bragg reflectors; Frequency shift keying; Laser modes; Laser tuning; Oscillators; Power amplifiers; Power lasers; Semiconductor lasers; Tunable circuits and devices;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519315
