DocumentCode :
2806403
Title :
Extraction of frequency dependent characteristic transmission line parameters up to 20 GHz for global wiring in 90 nm SOI/Cu technology
Author :
Winkel, Thomas-Michael ; Ktata, M.F. ; Ludwig, Thomas ; Grabinski, H. ; Klink, Erich
Author_Institution :
IBM Deutschland Entwicklung GmbH, Boeblingen, Germany
fYear :
2004
fDate :
25-27 Oct. 2004
Firstpage :
131
Lastpage :
134
Abstract :
S-parameter measurements were performed on special test lines embedded in an 8 copper metal layer test chip in order to determine the propagation constant y(f) and the complex characteristic impedance Z0(f). Measurement results are presented for signal lines in the 7th metal layer showing very good agreement with FEM-simulations in the frequency range up to 20 GHz.
Keywords :
CMOS integrated circuits; S-parameters; copper; elemental semiconductors; finite element analysis; silicon-on-insulator; transmission line theory; 20 GHz; 90 nm; CMOS technology; FEM simulations; S-parameter measurements; SOI-Cu technology; Si-SiO2-Cu; complex characteristic impedance; copper metal layer test chip; frequency dependent characteristics; global wiring; propagation constant; signal test lines; transmission line parameters; Copper; Frequency dependence; Impedance measurement; Performance evaluation; Scattering parameters; Semiconductor device measurement; Testing; Transmission line measurements; Transmission lines; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging, 2004. IEEE 13th Topical Meeting on
Print_ISBN :
0-7803-8667-1
Type :
conf
DOI :
10.1109/EPEP.2004.1407565
Filename :
1407565
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2806403
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