Extraction of frequency dependent characteristic transmission line parameters up to 20 GHz for global wiring in 90 nm SOI/Cu technology

Author

Winkel, Thomas-Michael ; Ktata, M.F. ; Ludwig, Thomas ; Grabinski, H. ; Klink, Erich

Author_Institution

IBM Deutschland Entwicklung GmbH, Boeblingen, Germany

fYear

2004

fDate

25-27 Oct. 2004

Firstpage

131

Lastpage

134

Abstract

S-parameter measurements were performed on special test lines embedded in an 8 copper metal layer test chip in order to determine the propagation constant y(f) and the complex characteristic impedance Z₀(f). Measurement results are presented for signal lines in the 7^th metal layer showing very good agreement with FEM-simulations in the frequency range up to 20 GHz.

Keywords

CMOS integrated circuits; S-parameters; copper; elemental semiconductors; finite element analysis; silicon-on-insulator; transmission line theory; 20 GHz; 90 nm; CMOS technology; FEM simulations; S-parameter measurements; SOI-Cu technology; Si-SiO₂-Cu; complex characteristic impedance; copper metal layer test chip; frequency dependent characteristics; global wiring; propagation constant; signal test lines; transmission line parameters; Copper; Frequency dependence; Impedance measurement; Performance evaluation; Scattering parameters; Semiconductor device measurement; Testing; Transmission line measurements; Transmission lines; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 2004. IEEE 13th Topical Meeting on

Print_ISBN

0-7803-8667-1

Type

conf

DOI

10.1109/EPEP.2004.1407565

Filename

1407565