DocumentCode :
2806600
Title :
Passive components integration in CMOS technology
Author :
Salimy, S. ; Toutain, S. ; Averty, D. ; Challali, F. ; Goullet, A. ; Besland, M.-P. ; Rhallabi, A. ; Landesman, J.-P. ; Saubat, J.-C. ; Charpentier, A.
Author_Institution :
Inst. de Rech. en Electrotech. et Electron. de Nantes Atlantique (IREENA), Nantes Univ., Nantes, France
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
118
Lastpage :
121
Abstract :
The present paper aims at integrating thin films as passive components in the Back End of Line of an industrial Si-based CMOS technology while keeping limited additional technological steps. TiNxOy and TixTayO thin films deposited by magnetron sputtering were respectively investigated as resistive and high-k materials dedicated to highly integrated resistors and capacitors. We report here on electrical characterizations of thin films of both materials regarding the performances criteria of the component versus thin film characteristics.
Keywords :
CMOS integrated circuits; elemental semiconductors; high-k dielectric thin films; semiconductor thin films; silicon; sputter deposition; capacitor; electrical characterization; high-k material; industrial Si-based CMOS technology; magnetron sputtering; passive components integration; resistive material; resistor; thin film characteristics; CMOS integrated circuits; CMOS technology; Films; Resistance; Resistors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
ISSN :
1930-8876
Print_ISBN :
978-1-4244-6658-0
Type :
conf
DOI :
10.1109/ESSDERC.2010.5618467
Filename :
5618467
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2806600
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