Passive components integration in CMOS technology

Author

Salimy, S. ; Toutain, S. ; Averty, D. ; Challali, F. ; Goullet, A. ; Besland, M.-P. ; Rhallabi, A. ; Landesman, J.-P. ; Saubat, J.-C. ; Charpentier, A.

Author_Institution

Inst. de Rech. en Electrotech. et Electron. de Nantes Atlantique (IREENA), Nantes Univ., Nantes, France

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

118

Lastpage

121

Abstract

The present paper aims at integrating thin films as passive components in the Back End of Line of an industrial Si-based CMOS technology while keeping limited additional technological steps. TiN_xO_y and Ti_xTa_yO thin films deposited by magnetron sputtering were respectively investigated as resistive and high-k materials dedicated to highly integrated resistors and capacitors. We report here on electrical characterizations of thin films of both materials regarding the performances criteria of the component versus thin film characteristics.

Keywords

CMOS integrated circuits; elemental semiconductors; high-k dielectric thin films; semiconductor thin films; silicon; sputter deposition; capacitor; electrical characterization; high-k material; industrial Si-based CMOS technology; magnetron sputtering; passive components integration; resistive material; resistor; thin film characteristics; CMOS integrated circuits; CMOS technology; Films; Resistance; Resistors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618467

Filename

5618467